Measurement of effective electron mass in biaxial tensile strained silicon on insulator
نویسندگان
چکیده
منابع مشابه
Strained Silicon-On-Insulator – Fabrication and Characterization
SSOI substrates were successfully fabricated using He ion implantation and annealing to relax thin (< 500nm) SiGe buffer layers, bonding and layer transfer processes to realize strained-Si layers onto oxide layers. The reduced thickness of the SiGe buffer possess numerous advantages such as reduced process costs for epitaxy and for reclaim of the handle wafer if the layer splitting is initiated...
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We show by Monte Carlo simulation that electron mobility is greater when strained-silicon inversion layers are grown on SiGe-on-insulator substrates than when unstrained-silicon-on-insulator devices are employed ~as experimentally observed!. However, the electron mobility in strained-Si/SiGe-on-insulator inversion layers is strongly dependent on the strained-silicon layer thickness, TSi , due t...
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The recently reported large enhancement of the electron mobility in strained-Si inversion layers at large carrier concentrations cannot be easily explained: The strong carrier confinement in inversion layers removes the sixfold degeneracy of the conduction-band minima, much as tensile in-plane strain does, so that the effect of strain should become irrelevant at large sheet carrier densities. T...
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The SiGe/Si material system is recently a subject of increased research interest, since it provides beneficial band structure and transport properties due to strain. Monte Carlo method is used for analyzing these properties. Special focus is put on the description of the anisotropic majority/minority electron mobility in strained Si layers as a function of doping, electric field, and material c...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2009
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.3254330